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Other articles related with "resistive random access memory (RRAM)"：
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87305 |
Yun-Feng Lai(赖云锋), Fan Chen(陈凡), Ze-Cun Zeng(曾泽村), Pei-Jie Lin(林培杰), Shu-Ying Cheng(程树英), Jin-Ling Yu(俞金玲) |
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Thermal stability and data retention of resistive random access memory with HfOx/ZnO double layers |
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Chin. Phys. B
2017 Vol.26 (8): 87305-087305
[Abstract]
(548)
[HTML 1 KB]
[PDF 671 KB]
(353)
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107302 |
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮) |
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Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer |
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Chin. Phys. B
2016 Vol.25 (10): 107302-107302
[Abstract]
(620)
[HTML 1 KB]
[PDF 1458 KB]
(280)
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56501 |
Nianduan Lu(卢年端), Pengxiao Sun(孙鹏霄), Ling Li(李泠), Qi Liu(刘琦), Shibing Long(龙世兵), Hangbing Lv(吕杭炳), Ming Liu(刘明) |
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Thermal effect on endurance performance of 3-dimensional RRAM crossbar array |
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Chin. Phys. B
2016 Vol.25 (5): 56501-056501
[Abstract]
(661)
[HTML 1 KB]
[PDF 1729 KB]
(395)
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117305 |
Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Gao Hai-Xia (高海霞), Yang Ha-Ni (杨哈妮), Wang Guo-Ming (王国明), Long Shi-Bing (龙世兵), Ma Xiao-Hua (马晓华), Liu Ming (刘明) |
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Resistive switching characteristics of Ti/ZrO2/Pt RRAM device |
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Chin. Phys. B
2014 Vol.23 (11): 117305-117305
[Abstract]
(593)
[HTML 1 KB]
[PDF 1524 KB]
(817)
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37201 |
Wei Xiao-Ying (韦晓莹), Hu Ming (胡明), Zhang Kai-Liang (张楷亮), Wang Fang (王芳), Zhao Jin-Shi (赵金石), Miao Yin-Ping (苗银萍) |
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Analysis of resistive switching behaviors of vanadium oxide thin film |
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Chin. Phys. B
2013 Vol.22 (3): 37201-037201
[Abstract]
(830)
[HTML 0 KB]
[PDF 689 KB]
(1421)
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